发明名称 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing method and a substrate processing device, capable of successfully hydrophobizing the whole surface of a substrate by prompting hydrophobization in a peripheral part of the surface of the substrate, thereby suppressing or preventing pattern collapse.SOLUTION: A substrate processing device is a device which dries a wafer W in which a plurality of convex patterns are formed on a surface thereof. A silylation solution supply step (S4), a substrate heating step, and a drying step (S6) are performed in the substrate processing device. The silylation solution supply step (S4) supplies a silylation solution to an upper surface of the wafer W held in a spin chuck. The substrate heating step heats the wafer in parallel with the silylation solution supply step. The drying step (S6) dries the wafer by rotating it after the silylation solution supply step is performed.
申请公布号 JP2014197571(A) 申请公布日期 2014.10.16
申请号 JP20130053240 申请日期 2013.03.15
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 EMOTO TETSUYA;OKUTANI MANABU
分类号 H01L21/304 主分类号 H01L21/304
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