| 摘要 |
PROBLEM TO BE SOLVED: To provide an RF switching circuit in which both low insertion loss and high isolation of a transistor are improved.SOLUTION: A switching circuit 300 includes pass switches 306a and 306b including group III-V transistors coupled between an input 302a and an output 302b. The switching circuit 300 further includes shunt switches 326a and 326b configured to ground an input side of the switching circuit 300 while the pass switches 306a and 306b are disabled. The switching circuit 300 also includes gate control transistors 310a, 310b, 340a, and 340b configured to reduce resistance 312a, 312b, 312c, and 312d between control terminals 314a, 314b, 314c, and 314d of the pass switches 306a and 306b and/or the shunt switches 326a and 326b and gates of the group III-V transistors of the pass switches 306a and 306b and/or the shunt switches 326a and 326b. |
