| 发明名称 |
Method of Producing Crystals of Nitrides of Group 13 Elements and Melt Compositions |
| 摘要 |
It is provided a method of producing a crystal of a nitride of a group 13 element in a melt by flux method. The melt is generated by heating a composition including a material for the group 13 element, a material for at least one of an alkali metal and an alkaline earth metal and a liquid material for germanium. Upon producing a crystal of a nitride of a group 13 element in a melt by flux method, it is thereby possible to reduce in-plane distribution of a property such as carrier density of the thus obtained crystal of a nitride of a group 13 element. |
| 申请公布号 |
US2014305369(A1) |
申请公布日期 |
2014.10.16 |
| 申请号 |
US201414314227 |
申请日期 |
2014.06.25 |
| 申请人 |
NGK INSULATORS, LTD. |
发明人 |
Sakai Masahiro;Iwai Makoto |
| 分类号 |
C30B19/02;C30B29/40 |
主分类号 |
C30B19/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of producing a crystal of a nitride of a group 13 element in a melt by flux method, the method comprising the step of:
heating a composition comprising a material for said group 13 element, a material for at least one of an alkali metal and an alkaline earth metal and a liquid material for germanium to generate said melt. |
| 地址 |
Aichi-prefecture JP |
