发明名称 |
INTEGRATED CIRCUIT INCLUDING A VOLTAGE DIVIDER AND METHODS OF OPERATING THE SAME |
摘要 |
An integrated circuit includes at least one memory array and at least one capacitor array over a substrate. The at least one capacitor array includes a plurality of capacitor cell structures. The capacitor cell structures of the plurality of cell structures comprise a first capacitor electrode over the substrate. A second capacitor electrode is over the first capacitor electrode. A third capacitor electrode is adjacent to first sidewalls of the first and second capacitor electrodes. A fourth capacitor electrode is adjacent to second sidewalls of the first and second capacitor electrodes. A fifth capacitor electrode is over the substrate and adjacent to the fourth capacitor electrode. |
申请公布号 |
US2014307510(A1) |
申请公布日期 |
2014.10.16 |
申请号 |
US201414315415 |
申请日期 |
2014.06.26 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN Yvonne;CHU Wen-Ting |
分类号 |
H01L27/115;G11C16/04 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
1. An integrated circuit comprising:
at least one memory array over a substrate; and at least one capacitor array including a plurality of capacitor cell structures over the substrate, the capacitor cell structures of the plurality of cell structures comprising: a first capacitor electrode over the substrate; a second capacitor electrode over the first capacitor electrode; a third capacitor electrode adjacent to first sidewalls of the first and second capacitor electrodes; a fourth capacitor electrode adjacent to second sidewalls of the first and second capacitor electrodes; and a fifth capacitor electrode over the substrate and adjacent to the fourth capacitor electrode. |
地址 |
Hsinchu TW |