发明名称 INTEGRATED CIRCUIT INCLUDING A VOLTAGE DIVIDER AND METHODS OF OPERATING THE SAME
摘要 An integrated circuit includes at least one memory array and at least one capacitor array over a substrate. The at least one capacitor array includes a plurality of capacitor cell structures. The capacitor cell structures of the plurality of cell structures comprise a first capacitor electrode over the substrate. A second capacitor electrode is over the first capacitor electrode. A third capacitor electrode is adjacent to first sidewalls of the first and second capacitor electrodes. A fourth capacitor electrode is adjacent to second sidewalls of the first and second capacitor electrodes. A fifth capacitor electrode is over the substrate and adjacent to the fourth capacitor electrode.
申请公布号 US2014307510(A1) 申请公布日期 2014.10.16
申请号 US201414315415 申请日期 2014.06.26
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 LIN Yvonne;CHU Wen-Ting
分类号 H01L27/115;G11C16/04 主分类号 H01L27/115
代理机构 代理人
主权项 1. An integrated circuit comprising: at least one memory array over a substrate; and at least one capacitor array including a plurality of capacitor cell structures over the substrate, the capacitor cell structures of the plurality of cell structures comprising: a first capacitor electrode over the substrate; a second capacitor electrode over the first capacitor electrode; a third capacitor electrode adjacent to first sidewalls of the first and second capacitor electrodes; a fourth capacitor electrode adjacent to second sidewalls of the first and second capacitor electrodes; and a fifth capacitor electrode over the substrate and adjacent to the fourth capacitor electrode.
地址 Hsinchu TW