SEMICONDUCTOR DEVICE INCLUDING COPPER WIRING AND VIA WIRING HAVING LENGTH LONGER THAN WIDTH THEREOF AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device includes a first interconnect formed over the semiconductor substrate. An interlayer dielectric film is formed over the first interconnect, and a hole is formed in the interlayer dielectric film such that the hole reaches the first interconnect. A trench is formed in the interlayer dielectric film, and a conductive film is embedded in the hole and the trench, thereby a via is formed in the hole and a second interconnect in the trench. In a planar view, the first interconnect extends in a first direction, the second interconnect extends in a second direction which is perpendicular to the first direction, and a maximum width of the via in the second direction is larger than a maximum width of the via in the first direction.

主权项

1. A semiconductor device, comprising:
a first interconnect formed over the semiconductor substrate; an interlayer dielectric film formed over the first interconnect; a hole formed in the interlayer dielectric film such that the hole reaches the first interconnect; a trench formed in the interlayer dielectric film; and a conductive film embedded in the hole and the trench, thereby a via is formed in the hole and a second interconnect in the trench, wherein, in a planar view, the first interconnect extends in a first direction, wherein, in a planar view, the second interconnect extends in a second direction which is perpendicular to the first direction, and wherein a maximum width of the via in the second direction is larger than a maximum width of the via in the first direction.