发明名称 |
PHOTOVOLTAIC DEVICE INCLUDING A P-N JUNCTION |
摘要 |
A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p- type absorber layer above the CdSSe layer. |
申请公布号 |
WO2014121187(A3) |
申请公布日期 |
2014.10.16 |
申请号 |
WO2014US14414 |
申请日期 |
2014.02.03 |
申请人 |
FIRST SOLAR, INC. |
发明人 |
DAMJANOVIC, DAN;LIAO, FENG;POWELL, RICK;SHAO, RUI;TRIVEDI, JIGISH;ZHAO, ZHIBO |
分类号 |
H01L31/0256;H01L31/0272;H01L31/028 |
主分类号 |
H01L31/0256 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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