发明名称 PHOTOVOLTAIC DEVICE INCLUDING A P-N JUNCTION
摘要 A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p- type absorber layer above the CdSSe layer.
申请公布号 WO2014121187(A3) 申请公布日期 2014.10.16
申请号 WO2014US14414 申请日期 2014.02.03
申请人 FIRST SOLAR, INC. 发明人 DAMJANOVIC, DAN;LIAO, FENG;POWELL, RICK;SHAO, RUI;TRIVEDI, JIGISH;ZHAO, ZHIBO
分类号 H01L31/0256;H01L31/0272;H01L31/028 主分类号 H01L31/0256
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