THIN FILM TRANSISTOR

摘要

A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, a first conductive layer, a second conductive layer, an insulating layer and a gate electrode. The drain electrode is spaced apart from the source electrode. The first conductive layer is sandwiched between the source electrode and the semiconductor layer. The second conductive layer is sandwiched between the drain electrode and the semiconductor layer. The gate electrode is insulated from the source electrode, the drain electrode, the first conductive layer, the second conductive layer, and the semiconductor layer by the insulating layer. A first work-function of a first material of the first conductive layer and the second conductive layer is same as a second work-function of a second material of the semiconductor layer.

主权项

1. A thin film transistor, comprising:
a source electrode; a drain electrode spaced from the source electrode; a semiconductor layer comprising a carbon nanotube layer; a first conductive layer sandwiched between the source electrode and the semiconductor layer; a second conductive layer sandwiched between the drain electrode and the semiconductor layer; and a gate electrode insulated with the semiconductor layer, the first conductive layer, the second conductive layer, the source electrode and the drain electrode by an insulating layer, wherein a first work-function of a first material of the first conductive layer and the second conductive layer is same as a second work-function of a second material of the semiconductor layer, a channel is defined as a part of the semiconductor layer overlapped by the gate electrode along a thickness direction of the semiconductor layer, the first conductive layer and the second conductive layer extend toward each other and cover a part of the channel, a length of the part of the channel is greater than or equal to a distance between the gate electrode and the first conductive layer or between the gate electrode and the second conductive layer.