| 发明名称 |
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE |
| 摘要 |
A method for fabricating a semiconductor device includes sequentially forming an etch stop film and an insulating film on a substrate including a lower pattern forming a conductive mask pattern including a first opening on the insulating film, forming a via-hole in the insulating film using the conductive mask pattern as an etch mask, the via-hole exposing the etch stop film, removing the conductive mask pattern, and forming a passivation film along a side wall of the via-hole after removing the conductive mask pattern. |
| 申请公布号 |
US2014308810(A1) |
申请公布日期 |
2014.10.16 |
| 申请号 |
US201414199031 |
申请日期 |
2014.03.06 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KO Dong-Whan;KIM Jong-Sam;SHIN Hong-Jae;BOK Seung-Il;SON Sae-Il;JANG Woo-Jin |
| 分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating a semiconductor device, the method comprising:
sequentially forming an etch stop film and an insulating film on a substrate including a lower pattern; forming a conductive mask pattern including a first opening on the insulating film; forming a via-hole in the insulating film using the conductive mask pattern as an etch mask, the via-hole exposing the etch stop film; removing the conductive mask pattern; and forming a passivation film along a side wall of the via-hole after removing the conductive mask pattern. |
| 地址 |
Suwon-si KR |
