发明名称 ETCHING METHOD AND ETCHING APPARATUS
摘要 <p>The present invention is provided with a first etching step and a second etching step. In the first etching step, an etchant is ejected from a first fluid nozzle (20) and sprayed onto the etching surface of an etching object (1), whereby the etching surface is etched. In the second etching step, the etchant and a gas are mixed and ejected from a second fluid nozzle (30), and the etchant is sprayed onto the etching surface etched in the first etching step, whereby the etching surface if further etched. In the second etching step, the etchant in the form of liquid droplets smaller than those in the first etching step is sprayed onto the etching surface with a greater impact force than in the first etching step.</p>
申请公布号 WO2014167682(A1) 申请公布日期 2014.10.16
申请号 WO2013JP60885 申请日期 2013.04.11
申请人 CHEMITRON INC. 发明人 AKIYAMA, MASANORI;MATSUO, TATSUHIKO
分类号 C23F1/08;H05K3/06 主分类号 C23F1/08
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