| 摘要 |
<p>The present invention is to provide a nonvolatile memory device capable of reducing the overall area by reducing the peripheral circuit area. The nonvolatile memory device comprises: a gate structure which includes a select gate on a substrate and a memory gate formed on one side wall of the substrate, and has a P-channel; a drain area formed on one substrate of the gate structure and overlapped with a portion of the memory gate; and a source area formed on the other substrate of the gate structure and overlapped with a portion of the select gate.</p> |
