| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device which has low threshold current, high slope efficiency and high power conversion efficiency.SOLUTION: A semiconductor laser LD1 comprises: a first conductivity type semiconductor substrate; a first conductivity type clad layer laminated on the semiconductor substrate; a first optical guide layer laminated on the first conductivity type clad layer; an active layer laminated on the first optical guide layer; a second optical guide layer laminated on the active layer; and a second conductivity type clad layer laminated on the second optical guide layer. The semiconductor laser device LD1 has a total optical guide layer thickness which is a sum of thicknesses of an n-side optical guide layer and a p-side optical guide layer set at a thickness in which the first-order mode is allowed in a crystal growth direction. A low refraction index layer having a refraction index lower than a refraction index of the n-type clad layer is provided between the n-side optical guide layer and the n-type clad layer, and the position of the active layer is displaced from the center of the total optical guide layer to the p-type clad layer side. |
