发明名称 |
SEMICONDUCTOR DEVICE, HAVING THROUGH ELECTRODES, A MANUFACTURING METHOD THEREOF, AND AN ELECTRONIC APPARATUS |
摘要 |
A semiconductor device includes a semiconductor substrate and a through electrode provided in a through hole formed in the semiconductor substrate. The through electrode partially protrudes from a back surface of the semiconductor substrate, which is opposite to an active surface thereof. The through electrode includes a resin core and a conductive film covering at least a part of the resin core. |
申请公布号 |
US2014306342(A1) |
申请公布日期 |
2014.10.16 |
申请号 |
US201414315965 |
申请日期 |
2014.06.26 |
申请人 |
Seiko Epson Corporation |
发明人 |
YODA Tsuyoshi;HARA Kazumi |
分类号 |
H01L23/00 |
主分类号 |
H01L23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Tokyo JP |