发明名称 SEMICONDUCTOR DEVICE, HAVING THROUGH ELECTRODES, A MANUFACTURING METHOD THEREOF, AND AN ELECTRONIC APPARATUS
摘要 A semiconductor device includes a semiconductor substrate and a through electrode provided in a through hole formed in the semiconductor substrate. The through electrode partially protrudes from a back surface of the semiconductor substrate, which is opposite to an active surface thereof. The through electrode includes a resin core and a conductive film covering at least a part of the resin core.
申请公布号 US2014306342(A1) 申请公布日期 2014.10.16
申请号 US201414315965 申请日期 2014.06.26
申请人 Seiko Epson Corporation 发明人 YODA Tsuyoshi;HARA Kazumi
分类号 H01L23/00 主分类号 H01L23/00
代理机构 代理人
主权项
地址 Tokyo JP