METHOD FOR OBTAINING A HETEROGENEOUS SUBSTRATE FOR THE PRODUCTION OF SEMICONDUCTORS, AND CORRESPONDING SUBSTRATE

摘要

A method for obtaining a heterogeneous substrate intended for use in the production of a semiconductor comprises the following steps: (a) obtaining a first substrate (2) made from a type II-VI or type III-V material and a second substrate (1), each substrate being substantially planar and each substrate having a pre-determined surface area; (b) grinding a non-through recess (10) into the second substrate (1), the surface area of said recess being greater than the surface area of the first substrate, such that the first substrate can be housed in the recess; (c) depositing a bonding material (15) in the recess (10); (d) depositing the first substrate (2) in the recess (10) of the second substrate and securing the first substrate in the second substrate at a temperature below 300° C.; and (e) leveling the first and second substrates in order to obtain a heterogeneous substrate having a substantially planar face (30).

主权项

1. A method of obtaining a heterogeneous substrate for use in semiconductor fabrication, the method comprising the following steps:
a) providing a first substrate (2) of II-VI or III-V type material and a second substrate (1), the substrates being substantially plane and each presenting a determined area; b) making a non-through recess (10) in the second substrate (1) by grinding, the area of this recess being greater than the area of the first substrate, such that the first substrate can be received in said recess; c) depositing an adhesive material (15) in said recess (10); d) depositing the first substrate (2) in the recess (10) in the second substrate and fastening it in the second substrate, at a temperature lower than 300° C.; and e) leveling the first and second substrates in order to obtain a heterogeneous substrate presenting a face (30) that is substantially plane.