| 摘要 |
In the present invention, the chemical components include, by mass%, 0.0001-0.01% of C, 0.05-7.0% of Si, 0.01-3.0% of Mn, 0.0020-3.0% of Al, 0.0001-0.1% of S, 0.001-0.15% of P, 0.0010-0.01% of N, and 0.01-5.0% of Cu, the remainder comprising Fe and impurities. I2&thetas;=46.4, which is the diffraction intensity of copper sulfide having a hexagonal structure arising at 2&thetas;=46.4° obtained by means of X-ray diffraction with respect to an electroextraction residue, and I2&thetas;=32.3, which is the diffraction intensity of copper sulfide having a cubic structure arising at 2&thetas;=32.3°, satisfy I2&thetas;=46.4/I2&thetas;=32.3 ≤ 0.5. |
