SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

摘要

This silicon carbide semiconductor device (1) comprises a silicon carbide substrate (10) and a contact electrode (16). The silicon carbide substrate (10) includes an n-type region (14) and a p-type region (18) that is in contact with the n-type region (14). The contact electrode (16) is in contact with the n-type region (14) and the p-type region (18). The contact electrode (16) includes Ni atoms and Si atoms. The number of Ni atoms is from 87% to 92%, inclusive, of the total number of Ni atoms and Si atoms. Thus, it is possible to provide a silicon carbide semiconductor device that is capable of making ohmic contact with an n-type impurity region and capable of achieving low contact resistance with respect to a p-type impurity region, and a method for producing said silicon carbide semiconductor device.