INTERNAL PLASMA GRID APPLICATIONS FOR SEMICONDUCTOR FABRICATION

摘要

Embodiments disclosed in the specification relate to improved methods and devices for etching semiconductor substrates. A plasma grid assembly is disposed in a reaction chamber to partition the chamber into an upper sub-chamber and a lower sub-chamber. The plasma grid assembly can include at least one plasma grid which has slots of a specific aspect ratio which allow predetermined species to pass from the upper sub-chamber to the lower sub-chamber. In some cases, electron-ion plasma is generated in the upper sub-chamber. Electrons passing through the grids and then reaching the lower sub-chamber are cooled during such passing. In some cases, ion-ion plasma is generated in the lower chamber. The ion-ion plasma can be advantageously used in various etching processes.