| 摘要 |
PROBLEM TO BE SOLVED: To provide a back channel etched (BCE) thin film transistor (TFT) having no etch stopper layer, in which an oxide semiconductor layer of the TFT has excellent resistance against an acid etching solution used in formation of a source-drain electrode in manufacturing of the TFT and excellent resistance against stress.SOLUTION: In a thin film transistor which at least has on a substrate, a gate electrode, a gate insulation film, an oxide semiconductor layer, a source-drain electrode and a protection film for protecting the source-drain electrode in this order, the oxide semiconductor layer is composed of Sn, and one and more elements selected from a group consisting of In, Ga and Zn, and O, and a difference at a cross section in a lamination direction of the thin film transistor between a film thickness of the oxide semiconductor layer just below the source-drain electrode end and a film thickness of a central part of the oxide semiconductor layer is 5% and under. |
