| 摘要 |
This semiconductor device has a normally-off HEMT that is provided with: a first semiconductor layer (4); a second semiconductor layer (3), which forms a heterojunction with the first semiconductor layer, and generates a first two-dimensional electron gas layer (6a); a gate recess (7) that is formed in the first semiconductor layer; an insulating film (8) that is disposed on the wall surfaces of the gate recess; and a gate electrode (9) that is disposed on the insulating film. The gate recess has a width on the bottom surface side smaller than that on the opening side. The gate electrode is disposed along the side surfaces of the gate recess. When a gate voltage is applied to the gate electrode, a second two-dimensional electron gas layer (6b) is generated in the second semiconductor layer by overlapping a part of the first two-dimensional electron gas layer. |
