发明名称 |
GROUP III NITRIDE SEMICONDUCTOR STACKED BODY |
摘要 |
<p>The present invention relates to a group III nitride semiconductor stacked body comprising: an m-plane substrate; a growth-prevention area, on the m-plane substrate, having a plurality of windows in which group III nitride semiconductors grow; and a group III nitride semiconductor layer which is a coalescence of growth from two neighboring windows, and which has cavities formed prior to the coalescence, wherein the cross-sections of the cavities differ from the cross-sections which form during the growth of the group III nitride semiconductor layer.</p> |
申请公布号 |
WO2014168436(A1) |
申请公布日期 |
2014.10.16 |
申请号 |
WO2014KR03122 |
申请日期 |
2014.04.10 |
申请人 |
SOFT-EPI INC. |
发明人 |
HWANG, SUNG MIN;CHO, IN SUNG;LIM, WON TAEG;KIM, DOO SOO |
分类号 |
H01L33/32;H01L33/16;H01L33/20;H01L33/22 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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