发明名称 GROUP III NITRIDE SEMICONDUCTOR STACKED BODY
摘要 <p>The present invention relates to a group III nitride semiconductor stacked body comprising: an m-plane substrate; a growth-prevention area, on the m-plane substrate, having a plurality of windows in which group III nitride semiconductors grow; and a group III nitride semiconductor layer which is a coalescence of growth from two neighboring windows, and which has cavities formed prior to the coalescence, wherein the cross-sections of the cavities differ from the cross-sections which form during the growth of the group III nitride semiconductor layer.</p>
申请公布号 WO2014168436(A1) 申请公布日期 2014.10.16
申请号 WO2014KR03122 申请日期 2014.04.10
申请人 SOFT-EPI INC. 发明人 HWANG, SUNG MIN;CHO, IN SUNG;LIM, WON TAEG;KIM, DOO SOO
分类号 H01L33/32;H01L33/16;H01L33/20;H01L33/22 主分类号 H01L33/32
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