发明名称 ELECTROMAGNETIC BANDGAP STRUCTURE FOR SUPPRESSING ELECTROMAGNETIC COUPLING IN MICROSTRIP AND FLIP CHIP ON BOARD APPLICATIONS
摘要 <p>A hybrid assembly having improved cross talk characteristics comprises an electromagnetic band gap (EBG) layer (612) on a substrate (101) having an upper surface (111) and a lower surface and a semiconductor structure (MMIC) (602) mounted above teh EBG layer. A plurality of stars (400,402) made of an EBG material are preferably printed, or deposited, on the upper surface (111). The EBG material has slow wave characteristics. The plurality of stars teeellates the upper surface between conductive paths. Each of the stars has a center section (408) formed from a regular polygon, the center section having projections extending from the center section. The projections and the center section form a periphery. The periphery engages adjacent stars along the periphery. Stars are separated from adjacent starts by an interspace. Each of the stars is connected to a conductive via (604, 606), in turn connected to ground potential. A conductive layer (307) at ground potential is electrically continuous with vias (604, 606) used to interconnect all stars forming the EBG layer.</p>
申请公布号 EP1723689(B1) 申请公布日期 2014.10.15
申请号 EP20040795893 申请日期 2004.10.18
申请人 RAYTHEON COMPANY 发明人 TONOMURA, SAMUEL, D.
分类号 H01P1/16;H01L23/498;H01L23/50;H01L23/552;H01L23/66;H01L25/16;H01P1/20;H01Q15/00;H05K1/02 主分类号 H01P1/16
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