SUBSTRATE STRUCTURE AND SEMICONDUCTOR DEVICE EMPLOYING THE SAME

摘要

A substrate structure includes a substrate; a nuclear generation layer which is formed on the substrate and is made of a groups III-V compound semiconductor material which has a lattice constant difference of 1% or less from the substrate; and a buffer layer which is formed on the nuclear generation layer, has a larger lattice constant compared to the lattice constant of the nuclear generation layer, and is made of a groups III-V compound semiconductor material which has a lattice constant difference of 4% or less from the nuclear generation layer.