PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE

摘要

A method for producing a semiconductor device includes an implantation step of performing proton implantation from a rear surface of a semiconductor substrate (101) of a first conductivity type and a formation step of performing an annealing process for the semiconductor substrate (101) in a furnace to form a first semiconductor region of the first conductivity type which has a higher impurity concentration than the semiconductor substrate (101) after the implantation step. In the formation step, the furnace is in a hydrogen atmosphere and the volume concentration of hydrogen in the furnace annealing is equal to or greater than 0.5% and less than 4.65%. Therefore, it is possible to reduce crystal defects in the generation of donors by proton implantation. In addition, it is possible to improve the rate of change into a donor.