DEEP ULTRAVIOLET LIGHT EMITTING DEVICE SEPARATED FROM GROWTH SUBSTRATE AND METHOD FOR FABRICATING THE SAME

摘要

An ultraviolet light emitting diode and a method for fabricating the same are disclosed. The method for fabricating an ultraviolet light emitting diode comprises: forming a first superlattice layer containing Al_xGa_(1-x)N on a substrate; forming a sacrificial layer containing Al_zGa_(1-z)N on the first superlattice layer; partially removing the sacrificial layer; forming an epilayer on the sacrificial layer; and separating the substrate from the epilayer, wherein the sacrificial layer includes a cavity, the substrate is separated from the sacrificial layer to the epilayer, forming the epilayer includes forming an n-type semiconductor layer containing n-type Al_uGa_(1-u), and 0