| 摘要 |
<p>Disclosed are a flash memory device for reducing program time while reducing noise peak and a programming method thereof. A flash memory device of the present invention includes: a memory array including flash memory cells which are divided into a plurality of program blocks; a program voltage supply unit to generate a program voltage to be provided to a selected word line, the program voltage being sequentially increased according to the performing of the program loops; a page buffer unit including a plurality of page buffers corresponding to the program blocks, the page buffers providing each program data to bit lines of the program block corresponding to the activation of corresponding buffer control signals; and a control signal generator to generate the buffer control signals corresponding to the page buffers, the buffer control signals being sequentially activated to have a predetermined time interval in at least one program loop. In this case, the time difference is reduced according to the performing of the program loops. According to the flash memory device and a programming method thereof of the present invention, in an initial program loop, as the program loop is performed, the time difference and/or the number of program groups are reduced so that the program time may be fully reduced.</p> |
