| 摘要 |
The subject of the invention is a process for obtaining a material comprising a substrate and at least one at least partially crystalline titanium-oxide-based thin film deposited on a first side of said substrate, said process comprising the following steps: said at least one titanium-oxide-based thin film is deposited; said at least one titanium-oxide-based thin film is subjected to a crystallization treatment, supplying energy capable of raising each point of said at least one titanium-oxide-based thin film to a temperature of at least 300° C. while maintaining a temperature not exceeding 150° C. at any point on the opposite side of said substrate to said first side; said crystallization treatment being preceded by a deposition step, in which an energy-providing film is deposited above and/or below said titanium-oxide-based thin film, said energy-providing film being capable of absorbing the energy supplied during said crystallization treatment more effectively than said at least one titanium oxide film and/or of creating additional energy during said crystallization treatment, and of transmitting at least some of said energy to said at least one titanium-oxide-based thin film during said crystallization treatment. |
