METHOD FOR MANUFACTURING BONDED SILICON-ON-INSULATOR (SOI) WAFER

摘要

According to the present invention, there is provided a method for manufacturing an SOI wafer having the step of performing a first sacrificial oxidation treatment on the aforementioned bonded SOI wafer in which the delamination has been performed after a first RTA treatment has been performed thereon and then performing a second sacrificial oxidation treatment thereon after a second RTA treatment has been performed thereon, wherein the first and second RTA treatments are performed under a hydrogen gas containing atmosphere and at a temperature of 1100°C or more, wherein after a thermal oxide film has been formed on the aforementioned SOI layer front surface by performing only thermal oxidation by a batch type heat treating furnace at a temperature of 900° C or more and 1000° C or less in the first and second sacrificial oxidation treatments, a treatment for removing the thermal oxide film is performed. As a result, in manufacture of the bonded SOI wafer by an ion implantation delamination method, there is provided the method by which generation of a slip dislocation and a defect can be suppressed while improving the surface roughness of the SOI layer in which the delamination has been performed and the bonded SOI wafer having the SOI layer of a desired film thickness and an excellent film thickness distribution can be manufactured.