| 摘要 |
<p>The present invention relates to an etching liquid composition for a copper-containing metal film including an amine derivative, second cupric ions, and an inorganic acid. More specifically, the present invention relates to an etching method of a copper-containing metal film which includes a step of etching the cooper-containing metal film using the etching liquid composition for the copper-containing metal film. The circuit wiring is close to a straight line from the top. An etching pattern can provide a large circuit wiring.</p> |
