| 发明名称 |
Semiconductor memory device |
| 摘要 |
A semiconductor memory device includes a memory cell unit including a plurality of memory cells coupled between a plurality of word lines and a plurality of bit lines, and configured to provide a read value in response to an activated word line, a reference value generating unit including a plurality of reference value generating cells coupled between the plurality of word lines and a reference bit line, and configured to provide a single reference value in response to the activated word line, and a sense circuit configured to provide a sense output signal based on the single reference value and the read value. |
| 申请公布号 |
US8861263(B2) |
申请公布日期 |
2014.10.14 |
| 申请号 |
US201213717570 |
申请日期 |
2012.12.17 |
| 申请人 |
SK Hynix Inc. |
发明人 |
Lee Seung Hyun |
| 分类号 |
G11C11/00;G11C11/16;G11C7/06;G11C7/12;G11C7/14 |
主分类号 |
G11C11/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor memory device, comprising:
a memory cell unit including a plurality of memory cells coupled to and disposed between a plurality of word lines and a plurality of bit lines and configured to provide a read value in response to an activated word line; a reference value generating unit including a plurality of reference value generating cells coupled to and disposed between the plurality of word lines and a single reference bit line, wherein the plurality of reference value generating cells is configured to provide a single reference value in response to the activated word line, the single reference value corresponding to a value to determine a logic state of the read value; and a sense circuit configured to provide a sense output signal based on the single reference value and the read value, wherein a reference value generating cell has a different size from that of a memory cell. |
| 地址 |
Icheon KR |
