发明名称 |
Methods of fabricating optoelectronic devices using semiconductor-particle monolayers and devices made thereby |
摘要 |
Methods of fabricating optoelectronic devices, such as photovoltaic cells and light-emitting devices. In one embodiment, such a method includes providing a substrate, applying a monolayer of semiconductor particles to the substrate, and encasing the monolayer with one or more coatings so as to form an encased-particle layer. At some point during the method, the substrate is removed so as to expose the reverse side of the encased-particle layer and further processing is performed on the reverse side. When a device made using such a method has been completed and installed into an electrical circuit the semiconductor particles actively participate in the photoelectric effect or generation of light, depending on the type of device. |
申请公布号 |
US8859310(B2) |
申请公布日期 |
2014.10.14 |
申请号 |
US201113704088 |
申请日期 |
2011.06.10 |
申请人 |
Versatilis LLC |
发明人 |
Jain Ajaykumar R. |
分类号 |
H01L21/00;H01L31/18;H01L21/02;H01L31/0384;H01L33/52;H01L31/0392;H01L31/0352;B82Y20/00;H01L31/0203;H01L31/072;H01L33/00;H01L33/18;H01L33/32 |
主分类号 |
H01L21/00 |
代理机构 |
Downs Rachlin Martin PLLC |
代理人 |
Downs Rachlin Martin PLLC |
主权项 |
1. A method of fabricating an optoelectronic device, comprising:
providing a first substrate having a first surface; applying a monolayer of semiconductor particles to the first surface; encasing the semiconductor particles of the monolayer with one or more coatings so as to form an encased-particle layer having an interface side confronting the first surface of the first substrate; separating the first substrate and the encased-particle layer from one another so as to expose the interface side of the encased-particle layer; and processing the interface side of the encased-particle layer to at least include a first electrode. |
地址 |
Winooski VT US |