发明名称 Methods of fabricating optoelectronic devices using semiconductor-particle monolayers and devices made thereby
摘要 Methods of fabricating optoelectronic devices, such as photovoltaic cells and light-emitting devices. In one embodiment, such a method includes providing a substrate, applying a monolayer of semiconductor particles to the substrate, and encasing the monolayer with one or more coatings so as to form an encased-particle layer. At some point during the method, the substrate is removed so as to expose the reverse side of the encased-particle layer and further processing is performed on the reverse side. When a device made using such a method has been completed and installed into an electrical circuit the semiconductor particles actively participate in the photoelectric effect or generation of light, depending on the type of device.
申请公布号 US8859310(B2) 申请公布日期 2014.10.14
申请号 US201113704088 申请日期 2011.06.10
申请人 Versatilis LLC 发明人 Jain Ajaykumar R.
分类号 H01L21/00;H01L31/18;H01L21/02;H01L31/0384;H01L33/52;H01L31/0392;H01L31/0352;B82Y20/00;H01L31/0203;H01L31/072;H01L33/00;H01L33/18;H01L33/32 主分类号 H01L21/00
代理机构 Downs Rachlin Martin PLLC 代理人 Downs Rachlin Martin PLLC
主权项 1. A method of fabricating an optoelectronic device, comprising: providing a first substrate having a first surface; applying a monolayer of semiconductor particles to the first surface; encasing the semiconductor particles of the monolayer with one or more coatings so as to form an encased-particle layer having an interface side confronting the first surface of the first substrate; separating the first substrate and the encased-particle layer from one another so as to expose the interface side of the encased-particle layer; and processing the interface side of the encased-particle layer to at least include a first electrode.
地址 Winooski VT US