发明名称 Pattern forming method, positional deviation measuring method and photomask
摘要 According to one embodiment, a positional deviation measuring method includes measuring a positional deviation of a device pattern formed in a lower layer portion using an alignment mark of the lower layer portion as a reference; measuring a positional deviation of a device pattern formed in an upper layer portion above the lower layer portion using an alignment mark of the upper layer portion as a reference; measuring a positional deviation between the alignment mark of the lower layer portion and the alignment mark of the upper layer portion; and calculating a positional deviation between the device patterns based on the positional deviation between the alignment marks.
申请公布号 US8859167(B2) 申请公布日期 2014.10.14
申请号 US201213724498 申请日期 2012.12.21
申请人 Kabushiki Kaisha Toshiba 发明人 Hagio Yoshinori;Okamoto Yosuke
分类号 G03F1/00;G03F7/20 主分类号 G03F1/00
代理机构 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A photomask comprising: a pair of first patterns, and a pair of second patterns that have a positional deviation amount of weighted centers different from that of the first patterns.
地址 Tokyo JP