发明名称 |
Pattern forming method, positional deviation measuring method and photomask |
摘要 |
According to one embodiment, a positional deviation measuring method includes measuring a positional deviation of a device pattern formed in a lower layer portion using an alignment mark of the lower layer portion as a reference; measuring a positional deviation of a device pattern formed in an upper layer portion above the lower layer portion using an alignment mark of the upper layer portion as a reference; measuring a positional deviation between the alignment mark of the lower layer portion and the alignment mark of the upper layer portion; and calculating a positional deviation between the device patterns based on the positional deviation between the alignment marks. |
申请公布号 |
US8859167(B2) |
申请公布日期 |
2014.10.14 |
申请号 |
US201213724498 |
申请日期 |
2012.12.21 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Hagio Yoshinori;Okamoto Yosuke |
分类号 |
G03F1/00;G03F7/20 |
主分类号 |
G03F1/00 |
代理机构 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A photomask comprising:
a pair of first patterns, and a pair of second patterns that have a positional deviation amount of weighted centers different from that of the first patterns. |
地址 |
Tokyo JP |