发明名称 Semiconductor substrate having dot marks and method of manufacturing the same
摘要 A semiconductor substrate having dot marks is provided. Particularly, a semiconductor substrate having dot marks having an improved reading rate is provided. In a semiconductor substrate having a plurality of dot marks formed of recess portions having an inverted frustum shape, the plurality of dot marks constitutes a two-dimensional code disposed in a rectangular region of 0.25 mm2 to 9 mm2, the diameter W of the recess portion on the surface of the semiconductor substrate is 20 μm to 200 μm, is larger than the diameter w of the bottom surface of the recess portion, and is smaller than the thickness of the semiconductor substrate, the side surface of the recess portion has four or more trapezoidal flat taper surfaces, and the taper angle of the taper surface is in a range of 44° to 65° with respect to the surface of the semiconductor substrate.
申请公布号 US8860227(B2) 申请公布日期 2014.10.14
申请号 US201213703728 申请日期 2012.06.22
申请人 Panasonic Corporation 发明人 Usui Yukiya
分类号 H01L29/40;H01L21/311 主分类号 H01L29/40
代理机构 Pearne & Gordon LLP 代理人 Pearne & Gordon LLP
主权项 1. A semiconductor substrate having a plurality of dot marks each formed of a recess portion having an inverted frustum shape, wherein the plurality of dot marks constitutes a two-dimensional code disposed in a rectangular region of 0.25 mm2 to 9 mm2, a diameter W of the recess portion on a surface of the semiconductor substrate is 20 μm to 200 μm, is larger than a diameter w of a bottom surface of the recess portion, and is smaller than a thickness of the semiconductor substrate, a depth of the recess portion of the dot marks is smaller than the thickness of the semiconductor substrate, a side surface of the recess portion has four or more trapezoidal flat taper surfaces, and a taper angle of the taper surface is in a range of 44° to 65° with respect to the surface of the semiconductor substrate, wherein information codes are or character information is written in the semiconductor substrate using the plurality of dot marks.
地址 Osaka JP