| 发明名称 | Method of manufacturing a semiconductor device and semiconductor device | ||
| 摘要 | A method of manufacturing a semiconductor device includes a sealing step of sealing an inner lead of a lead frame with a resin, and a bending step of bending a target bending region in which a stress by bending is not applied to a resin burr generated in the sealing step. | ||
| 申请公布号 | US8859338(B2) | 申请公布日期 | 2014.10.14 |
| 申请号 | US201313773343 | 申请日期 | 2013.02.21 |
| 申请人 | Mitsubishi Electric Corporation | 发明人 | Sakamoto Ken |
| 分类号 | H01L21/60;H01L21/56;H01L23/495;H01L21/48 | 主分类号 | H01L21/60 |
| 代理机构 | Studebaker & Brackett PC | 代理人 | Studebaker & Brackett PC |
| 主权项 | 1. A method of manufacturing a semiconductor device, comprising the steps of: sealing an inner lead of a lead frame with a resin; bending a target bending region in which a stress by bending is not applied to a resin burr generated in said step of sealing, said target bending region being subjected to bending in at least one terminal included in said lead frame; and cutting a tie bar located between neighboring two of said terminals, said tie bar connecting said plurality of terminals included in said lead frame, and said target bending region is located in said tie bar included within said terminal; wherein each of said terminals becomes an independent terminal including the tie bar through said step of cutting. | ||
| 地址 | Tokyo JP | ||