发明名称 Method for producing solar cell and film-producing device
摘要 Disclosed in a method that is for producing a solar cell and that is characterized by performing an annealing step on a semiconductor substrate before an electrode-forming step. By means of performing annealing in the above manner, it is possible to improve the electrical characteristics of the solar cell without negatively impacting reliability or outward appearance. As a result, the method can be widely used in methods for producing solar cells having high reliability and electrical characteristics.
申请公布号 US8859320(B2) 申请公布日期 2014.10.14
申请号 US201113809077 申请日期 2011.07.12
申请人 Shin-Etsu Chemical Co., Ltd. 发明人 Mitta Ryo;Takahashi Mitsuhito;Hashigami Hiroshi;Murakami Takashi;Tsukigata Shintarou;Watabe Takenori;Otsuka Hiroyuki
分类号 H01L21/00;H01L31/0216;H01L31/068;H01L31/0224 主分类号 H01L21/00
代理机构 Westerman, Hattori, Daniels & Adrian, LLP 代理人 Westerman, Hattori, Daniels & Adrian, LLP
主权项 1. A method for producing a solar cell, comprising, in the recited order, the steps of: forming an antireflection/passivation film on a semiconductor substrate, annealing the substrate, forming electrodes on the substrate, and firing the electrodes, wherein the passivation film is any one of MgF2, SiO2, Al2O3, SiO, SiN, TiO2, Ta2O5, and ZnS, or a stack of such layers.
地址 Tokyo JP
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