Method of manufacturing semiconductor light emitting device

摘要

There is provided a method of manufacturing a semiconductor light emitting device, the method including: sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate to form a light emitting part; forming a support part on the second conductivity type semiconductor layer to be coupled to the light emitting part; separating the semiconductor growth substrate from the light emitting part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the first conductivity type semiconductor layer from a surface of the semiconductor growth substrate.

主权项

1. A method of manufacturing a semiconductor light emitting device, the method comprising:
sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate to form a light emitting part; forming a support part on a first side of the second conductivity type semiconductor layer by bonding the support part to the first side via a conductive adhesive layer, to couple the support part to the light emitting part, the first side being opposite a second side of the second conductivity type semiconductor layer which contacts the active layer; separating the semiconductor growth substrate from the light emitting part by using the support part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the first conductivity type semiconductor layer from a surface of the semiconductor growth substrate, wherein the applying of the etching gas comprises: disposing a boat comprising a plurality of semiconductor growth substrates loaded in a height direction therein, each of the plurality of semiconductor growth substrates having the residue of the first conductivity type semiconductor layer remaining on the respective surfaces thereon, in a reaction chamber; heating and pressurizing an interior of the reaction chamber so that the plurality of semiconductor growth substrates is exposed to predetermined temperature and pressure conditions; and releasing the etching gas into the reaction chamber through a plurality of gas supply parts to remove the residue of the first conductivity type semiconductor layer from the respective surfaces of the plurality of semiconductor growth substrates, wherein the plurality of gas supply parts are disposed to be spaced apart from each other along a circumference of the boat, the plurality of gas supply parts having different heights corresponding to heights of respective regions of the interior of the reaction chamber partitioned in the height direction, and wherein the releasing of the etching gas comprises releasing the etching gas into the respective regions partitioned in the height direction in the interior of the reaction chamber through the plurality of gas supply parts having the different heights.