Flip-chip light-emitting diode structure and manufacturing method thereof

摘要

A flip-chip light-emitting diode structure comprises a carrier substrate, a light-emitting die structure, a reflective layer, an aperture, a dielectric layer, a first contact layer and a second contact layer. The light-emitting die structure, located on the carrier substrate, comprises a first type semiconductor layer, a second type semiconductor layer and a light emitting layer. The light emitting layer is formed between the first type and the second type semiconductor layer. The reflective layer is located on the first type semiconductor layer. The aperture penetrates the light-emitting die structure. The dielectric layer covers an inner sidewall of the aperture and extends to a portion of a surface of the reflective layer. The first contact layer is disposed on the part of the reflective layer not covered by the dielectric layer. The second contact layer fills up the aperture and is electrically connected to the second type semiconductor layer.

主权项

1. A manufacturing method of a flip-chip light-emitting diode structure, wherein the method comprises:
forming a light-emitting die structure on a growth substrate, wherein the light-emitting die structure comprises a first type semiconductor layer formed on the growth substrate, a light emitting layer formed on the first type semiconductor layer, and a second type semiconductor layer formed on the light emitting layer; removing the growth substrate to expose the first type semiconductor layer; forming a first aperture penetrating the first type semiconductor layer and the second type semiconductor layer in a predetermined second electrode area; forming a reflective layer on a portion of the first type semiconductor layer; forming a dielectric layer on an inner wall of the first aperture, wherein the dielectric layer extends to a portion of a surface of the reflective layer; forming a first contact layer on the part of the reflective layer not covered by the dielectric layer in a predetermined first electrode area; forming a second contact layer on the dielectric layer, wherein the second contact layer is connected to the second type semiconductor layer via the first aperture; and bonding the light-emitting die structure to a carrier substrate whose surface has a first and a second electrode respectively connected to the first and the second contact layer.