| 发明名称 | In—Ga—Zn—O type sputtering target | ||
| 摘要 | A sputtering target including an oxide sintered body which includes In, Ga and Zn and includes a structure having a larger In content than that in surrounding structures and a structure having larger Ga and Zn contents than those in surrounding structures. | ||
| 申请公布号 | US8858844(B2) | 申请公布日期 | 2014.10.14 |
| 申请号 | US201013265039 | 申请日期 | 2010.11.16 |
| 申请人 | Idemitsu Kosan Co., Ltd. | 发明人 | Yano Koki;Itose Masayuki |
| 分类号 | H01B1/02;C04B35/453;H01L29/786;C23C14/34;C04B35/626;C23C14/08;C04B35/01;H01L21/02 | 主分类号 | H01B1/02 |
| 代理机构 | Millen, White, Zelano & Branigan, P.C. | 代理人 | Millen, White, Zelano & Branigan, P.C. |
| 主权项 | 1. A sputtering target comprising an oxide sintered body which comprises In, Ga and Zn, and does not comprise Sn or comprises Sn at an atomic ratio [Sn/(In+Ga+Zn+Sn)] of less than 0.05, and comprises a structure having a larger In content than that in surrounding structures and a structure having larger Ga and Zn contents than those in surrounding structures. | ||
| 地址 | Tokyo JP | ||