发明名称 |
Polycrystalline III-nitrides |
摘要 |
This invention provides a process for producing high-purity dense polycrystalline III-nitride slabs. A vessel which contains a group III-metal such as gallium or an alloy of group III-metals of shallow depth is placed in a reactor. The group III-metal or alloy is heated until a molten state is reached after which a halide-containing source mixed with a carrier gas and a nitrogen-containing source is flowed through the reactor vessel. An initial porous crust of III-nitride forms on the surface of the molten III-metal or alloy which reacts with the nitrogen-containing source and the halide-containing source. The flow rate of the nitrogen-containing source is then increased and flowed into contact with the molten metal to produce a dense polycrystalline III-nitride. The products produced from the inventive process can be used as source material for III-nitride single crystal growth which material is not available naturally. |
申请公布号 |
US8858708(B1) |
申请公布日期 |
2014.10.14 |
申请号 |
US201012817548 |
申请日期 |
2010.06.17 |
申请人 |
The United States of America As represented by the Secretary of the Air Force |
发明人 |
Callahan Michael J.;Wang Buguo;Bailey John S. |
分类号 |
C30B25/00 |
主分类号 |
C30B25/00 |
代理机构 |
AFMCLO/JAZ |
代理人 |
AFMCLO/JAZ ;Moore Jeffrey R. |
主权项 |
1. A method for making a polycrystalline III-nitride of high purity and density comprising flowing a halide-containing vapor and a nitrogen-containing vapor into contact with a molten group III-metal by:
(a) flowing the nitrogen-containing vapor having a first nitrogen flow rate and the halide-containing vapor over the molten group III-metal at a first temperature for a first duration sufficient to form a porous crust in a first flow, wherein the porous crust comprises a plurality of pores, the porous crust covering a portion of an upper surface of the molten group III-metal; and (b) increasing the first nitrogen flow rate relative to a halide flow rate to obtain a second nitrogen flow rate in a second flow to contact a remaining portion of the molten group III-metal at the porous crust at a second temperature for a second duration sufficient to convert substantially all of the remaining portion of the molten group III-metal to a high density slab comprising the polycrystalline III-nitride, wherein the first temperature and the second temperature are substantially similar, the high density slab having a density of 75 to 99% and being substantially solid throughout. |
地址 |
Washington DC US |