Creating deep trenches on underlying substrate

摘要

A semiconductor structure is disclosed in which, in an embodiment, a first substrate includes at least one buried plate disposed in an upper part of the first substrate. Each of the at least one buried plate includes at least one buried plate contact, and a plurality of deep trench capacitors disposed about the at least one buried plate contact. A first oxide layer is disposed over the first substrate. The deep trench capacitors and buried plate contacts in the first substrate may be accessed for use in a variety of memory and decoupling applications.

主权项

1. A structure comprising:
a first substrate, the first substrate including:
at least one buried plate disposed in an upper part of the first substrate, the at least one buried plate being between about 3.5 μm and about 4 μm thick, wherein each of the at least one buried plate includes:at least one buried plate contact,a plurality of deep trench capacitors disposed about the at least one buried plate contact, each of the plurality of deep trench capacitors having an insulating liner, wherein the insulating liner is one of silicon oxide, silicon nitride, HfO2, or HfSiO2; and a first oxide layer disposed over the first substrate.