Semiconductor device with a low ohmic current path

摘要

A semiconductor device includes a semiconductor substrate having a main horizontal surface, a back surface arranged opposite the main horizontal surface, a vertical transistor structure including a doped region and a control electrode arranged next to the main horizontal surface, an insulating region arranged at or close to the back surface, a deep vertical trench extending from the main horizontal surface through the semiconductor substrate and to the insulating region, an insulating layer arranged on a side wall of the deep vertical trench, and a low ohmic current path extending at least partially along the insulating layer and between the main horizontal surface and the back surface. A first metallization is in ohmic contact with the doped region and arranged on the main horizontal surface. A control metallization is arranged on the back surface and in ohmic contact with the control electrode via the low ohmic current path.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate, comprising:
a main horizontal surface;a back surface arranged opposite the main horizontal surface;a vertical transistor structure comprising a doped region and a control electrode arranged next to the main horizontal surface;an insulating region arranged at or close to the back surface;a deep vertical trench extending from the main horizontal surface through the semiconductor substrate and to the insulating region;an insulating layer arranged on a side wall of the deep vertical trench; anda low ohmic current path extending at least partially along the insulating layer and between the main horizontal surface and the back surface;
a first metallization in ohmic contact with the doped region and arranged on the main horizontal surface; anda control metallization arranged on the back surface and in ohmic contact with the control electrode via the low ohmic current path.