Compositions used in formation of oxide material layers, methods of forming an oxide material layer using the same, and methods of fabricating a thin film transistor using same

摘要

Methods of forming an oxide material layer are provided. The method includes mixing a precursor material with a peroxide material to form a precursor solution, coating the precursor solution on a substrate, and baking the coated precursor solution.

主权项

1. A method of forming an oxide material layer, comprising:
(a) mixing a precursor material with a peroxide material to form a precursor solution; (b) coating the precursor solution on a substrate; and (c) baking the coated precursor solution.