Memory cells and methods of forming memory cells

摘要

Some embodiments include memory cells having programmable material between a pair of electrodes. The programmable material includes a material selected from the group consisting of a metal silicate with a ratio of metal to silicon within a range of from about 2 to about 6, and metal aluminate with a ratio of metal to aluminum within a range of from about 2 to about 6. Some embodiments include methods of forming memory cells. First electrode material is formed. Programmable material is formed over the first electrode material, with the programmable material including metal silicate and/or metal aluminate. Second electrode material is formed over the programmable material, and then an anneal is conducted at a temperature within a range of from about 300° C. to about 500° C. for a time of from about 1 minute to about 1 hour.

主权项

1. A method of forming a memory cell, comprising:
forming first electrode material over a base; forming programmable material over the first electrode material; the programmable material comprising a region comprising a composition selected from the group consisting of a metal silicate with a ratio of metal to silicon within a range of from about 2 to about 6, and a metal aluminate with a ratio of metal to aluminum within a range of from about 2 to about 6; and forming second electrode material over the programmable material and subsequently annealing the programmable material.