发明名称 |
Method for manufacturing semiconductor light emitting element, semiconductor light emitting element, lamp, electronic device and mechanical apparatus |
摘要 |
A method for manufacturing a semiconductor light emitting element (1) which includes a first step of forming a first n-type semiconductor layer (12c) on a substrate (11) and a second step of sequentially forming a regrowth layer (12d) of the first n-type semiconductor layer (12c), a second n-type semiconductor layer (12b), a light emitting layer (13), and a p-type semiconductor layer (14) on the first n-type semiconductor layer (12c). In the step of forming the second n-type semiconductor layer (12b), a step (1) of supplying Si less than that forming the regrowth layer (12d) as a dopant to form a first layer of the second n-type semiconductor layer and a step (2) of supplying the Si more than that in the step (1) to form a second layer of the second n-type semiconductor layer are performed in this order. |
申请公布号 |
US8859313(B2) |
申请公布日期 |
2014.10.14 |
申请号 |
US201113582573 |
申请日期 |
2011.02.28 |
申请人 |
Toyoda Gosei Co., Ltd. |
发明人 |
Sakai Hiromitsu |
分类号 |
H01L21/00;B82Y20/00;H01L33/00;H01L21/02;H01L33/32;H01S5/30;H01S5/343 |
主分类号 |
H01L21/00 |
代理机构 |
Sughrue Mion, PLLC |
代理人 |
Sughrue Mion, PLLC |
主权项 |
1. A method for manufacturing a semiconductor light emitting element, comprising:
a first step of forming a first n-type semiconductor layer on a substrate in a first metal organic chemical vapor deposition apparatus; and a second step of sequentially forming a regrowth layer of the first n-type semiconductor layer, a second n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer including a p cladding layer and a p contact layer on the first n-type semiconductor layer in a second metal organic chemical vapor deposition apparatus, wherein, in the step of forming the second n-type semiconductor layer, a step (1) of supplying Si less than that forming the regrowth layer as a dopant to form a first layer of the second n-type semiconductor layer and a step (2) of supplying Si more than that in the step (1) to form a second layer of the second n-type semiconductor layer are performed in this order. |
地址 |
Aichi JP |