Negative pattern forming method and resist pattern

摘要

A negative pattern forming method, includes: (i) forming a film having a film thickness of 200 nm or more from a chemical amplification resist composition containing (A) a resin capable of increasing a polarity of the resin (A) by an action of an acid to decrease a solubility of the resin (A) for a developer containing one or more organic solvents, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film with a developer containing one or more organic solvents.

主权项

1. A negative pattern forming method, comprising:
(i) forming a film having a film thickness of 200 nm or more from a chemical amplification resist composition containing (A) a resin capable of increasing a polarity of the resin (A) by an action of an acid to decrease a solubility of the resin (A) for a developer containing one or more organic solvents, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film with a developer containing one or more organic solvents, wherein: the film formed from the chemical amplification resist composition is formed on a substrate not coated with a bottom anti-reflection coating; the substrate not coated with a bottom anti-reflection coating is a stepped substrate having a step of 10 nm or more in height; a step in the stepped substrate has a space of 20 nm to 200 nm; and the dissolution rate of the film formed of the resin (A) for butyl acetate at 25° C. is 25 nm/sec or more.