发明名称 Perpendicular magnetic recording medium
摘要 An object is to provide a perpendicular magnetic recording medium including a ground layer that prevents corrosion, while achieving a primary object of promoting finer magnetic particles of a magnetic recording layer and isolation of these magnetic particles.;The structure of a perpendicular magnetic recording medium 100 according to the present invention includes, at least on a base 110: a magnetic recording layer 122 on which a signal is recorded; a ground layer 118 provided below the magnetic recording layer; a non-magnetic layer 116 for controlling crystal orientation of the ground layer; and a soft magnetic layer 114 provided below the non-magnetic layer. The ground layer 118 is configured to have three layers including, in an order from bottom, a first ground layer 118a and a second ground layer 118b that contain ruthenium, and a third ground layer 118c that contains a metal. A gas pressure at film formation by sputtering for the second ground layer 118b is the highest among those for the above three layers.
申请公布号 US8859118(B2) 申请公布日期 2014.10.14
申请号 US201112987704 申请日期 2011.01.10
申请人 WD Media (Singapore) Pte. Ltd. 发明人 Tachibana Toshiaki;Onoue Takahiro
分类号 G11B5/66;G11B5/73;G11B5/84;G11B5/851 主分类号 G11B5/66
代理机构 代理人
主权项 1. A perpendicular magnetic recording medium comprising: a base; a magnetic recording layer formed on the base and on which a signal is recorded; a ground layer provided below the magnetic recording layer; a non-magnetic granular layer disposed between the magnetic recording layer and the ground layer for controlling crystal orientation of the ground layer; and a soft magnetic layer provided below the ground layer, wherein the ground layer is configured to have three layers including, in an order from the base, a first ground layer that contains ruthenium, a second ground layer that contains ruthenium, the second ground layer having crystal particles finer than those of the first ground layer, and a third ground layer that contains a metal and no oxygen, and a gas pressure at film formation by sputtering for the second ground layer is the highest among those for the three layers, thereby providing a finer crystal structure in the second ground layer than in the first ground layer or third ground layer, wherein the non-magnetic granular layer has a chemical composition different from said third ground layer.
地址 Singapore SG