NITRIDE SEMICONDUCTOR DEVICE HAVING IMPROVED ESD CHARACTERISTICS

摘要

Disclosed are a nitride semiconductor device having improved ESD characteristics and a manufacturing method thereof. The nitride semiconductor device includes a n-type contact layer of nitride series; a V-pit generation layer of nitride series which is located on the n-type contact layer and has a V-pit and an upper surface surrounding the V-pit; a low resistance nitride semiconductor layer which covers the V-pit generation layer and has a larger thickness on an upper surface surrounding the V-fit compared to the inner part of the V-fit; a high resistance nitride semiconductor layer which is formed on the low resistance nitride semiconductor layer and fills the V-pit; a p-type contact layer located on the high resistance nitride semiconductor layer; and an active layer located between the resistance nitride semiconductor layer and a p-type contact layer. Here, the low resistance nitride semiconductor layer has a higher impurity concentration compared to the V-pit generation layer. The high resistance nitride semiconductor layer has a lower impurity concentration compared to the V-pit generation layer.