发明名称 |
Neutron detection using GD-loaded oxide and nitride heterojunction diodes |
摘要 |
Solid state neutron detection utilizing gadolinium as a neutron absorber is described. The new class of narrow-gap neutron-absorbing semiconducting materials, including Gd-doped HfO2, Gd-doped EuO, Gd-doped GaN, Gd2O3 and GdN are included in three types of device structures: (1) a p-n heterostructure diode with a ˜30 μm Gd-loaded semiconductor grown on a conventional semiconductor (Si or B-doped Si); (2) a p-n junction or a p-i-n trilayer diode with a Gd-loaded semiconductoron one side and single-crystal semiconducting Li2B4O7 layer on the other side of the heterojunction; and (3) a p-n junction or a p-i-n trilayer diode with a Gd-loaded semiconductoron on one side and a boron nitride (BN) semiconductor layer on the other side of the heterojunction. |
申请公布号 |
US8860161(B2) |
申请公布日期 |
2014.10.14 |
申请号 |
US201213541923 |
申请日期 |
2012.07.05 |
申请人 |
Quantum Devices, LLC |
发明人 |
Dowben Peter A.;Tang Jinke;Wisbey David |
分类号 |
H01L27/14;H01L31/00;H01L31/115;H01L31/109;H01L31/032 |
主分类号 |
H01L27/14 |
代理机构 |
Quantum Devices, LLC |
代理人 |
Kelber Steven B.;Quantum Devices, LLC |
主权项 |
1. A solid state neutron detector comprising a layer of a p-type semiconductor, an insulator and an n-type semiconductor, wherein at least one of said p or n-type layers comprises Gd in an amount of 3-30 atomic percent. |
地址 |
Potomac MD US |