| 发明名称 | Composition for ferroelectric thin film formation, method for forming ferroelectric thin film and ferroelectric thin film formed by the method thereof | ||
| 摘要 | Disclosed is a composition for ferroelectric thin film formation which is used in the formation of a ferroelectric thin film of one material selected from the group consisting of PLZT, PZT, and PT. The composition for ferroelectric thin film formation is a liquid composition for the formation of a thin film of a mixed composite metal oxide formed of a mixture of a composite metal oxide (A) represented by general formula (1): (PbxLay)(ZrzTi(1-z))O3 [wherein 0.9<x<1.3, 0≦y<0.1, and 0≦z<0.9 are satisfied] with a composite oxide (B) or a carboxylic acid (B) represented by general formula (2): CnH2n+1COOH [wherein 3≦n≦7 is satisfied]. The composite oxide (B) contains one or at least two elements selected from the group consisting of P (phosphorus), Si, Ce, and Bi and one or at least two elements selected from the group consisting of Sn, Sm, Nd, and Y (yttrium). | ||
| 申请公布号 | US8859051(B2) | 申请公布日期 | 2014.10.14 |
| 申请号 | US200912736944 | 申请日期 | 2009.05.28 |
| 申请人 | Mitsubishi Materials Corporation | 发明人 | Fujii Jun;Sakurai Hideaki;Noguchi Takashi;Soyama Nobuyuki |
| 分类号 | B05D3/02;H01B3/14;C04B24/40;C04B24/42;C04B35/624;H01L41/18;B05D3/04;C01G25/00;C23C18/12;H01G4/12;H01G4/20;H01L21/02;H01L21/316;H01L41/318;C04B35/491;C04B35/493;C04B35/632;C04B111/92;H01L27/115;H01L49/02 | 主分类号 | B05D3/02 |
| 代理机构 | Edwards Wildman Palmer LLP | 代理人 | Edwards Wildman Palmer LLP |
| 主权项 | 1. A composition for the formation of a ferroelectric thin film which is used in the formation of a ferroelectric thin film of one material selected from the group consisting of PLZT, PZT, and PT, wherein the composition is a liquid composition for the formation of a thin film of a mixed composite metal oxide formed of a mixture of a composite metal oxide A represented by the general formula (1): (PbxLay)(ZrzTi(1-z)O3 [In the formula (1), 0.9<x<1.3, 0≦y<0.1, and 0<z<0.9] with a composite oxide B including Si, the composition comprising an organometallic compound solution wherein a raw material of the composite metal oxide A and a raw material of the composite oxide B are dissolved in an organic solvent in such a proportion as to provide the metal atom ratio represented by the general formula (1), wherein the composite oxide B includes one or more selected from the group consisting of silicon 2-ethyl hexanoate, silicon 2-ethyl butyrate, and tetrakis (acetylacetonate) silicon, and wherein the molar ratio B/A of the composite oxide B to the composite metal oxide A is in the range of 0.005≦B/A<0.1. | ||
| 地址 | Tokyo JP | ||