| 发明名称 | Semiconductor packages, systems, and methods of formation thereof | ||
| 摘要 | In accordance with an embodiment of the present invention, a semiconductor package includes a current rail comprising a first contact area and a second contact area, a first groove and a second groove, and a magnetic field generating portion. Along a current flow direction, the first groove is disposed between the first contact area and the magnetic field generating portion and the second groove is disposed between the magnetic field generating portion and the second contact area. The thickness of the current rail at the first groove is smaller than the thickness of the current rail at the first contact area. | ||
| 申请公布号 | US8860153(B2) | 申请公布日期 | 2014.10.14 |
| 申请号 | US201213691293 | 申请日期 | 2012.11.30 |
| 申请人 | Infineon Technologies AG | 发明人 | Ausserlechner Udo;Strutz Volker |
| 分类号 | H01L27/14;H01L29/82;H01L29/84;H01L25/16;H01L21/50 | 主分类号 | H01L27/14 |
| 代理机构 | Slater & Matsil, L.L.P. | 代理人 | Slater & Matsil, L.L.P. |
| 主权项 | 1. A semiconductor package comprising: a current rail comprising a first contact area and a second contact area, a first groove and a second groove, and a magnetic field generating portion, wherein, along a current flow direction, the first groove is disposed between the first contact area and the magnetic field generating portion and the second groove is disposed between the magnetic field generating portion and the second contact area, wherein a thickness of the current rail at the first groove is smaller than a thickness of the current rail at the first contact area. | ||
| 地址 | Neubiberg DE | ||