| 发明名称 | Nitride semiconductor device | ||
| 摘要 | A nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a conductive substrate, a first electrode, a second electrode, and a control electrode. The second semiconductor layer is directly bonded to the first semiconductor layer. The conductive substrate is provided on and electrically connected to the first semiconductor layer. The first electrode and the second electrode are provided on and electrically connected to a surface of the second semiconductor layer on a side opposite to the first semiconductor layer. The control electrode is provided on the surface of the second semiconductor layer between the first electrode and the second electrode. The first electrode is electrically connected to a drain electrode of a MOSFET formed of Si. The control electrode is electrically connected to a source electrode of the MOSFET. The conductive substrate is electrically connected to a gate electrode of the MOSFET. | ||
| 申请公布号 | US8860090(B2) | 申请公布日期 | 2014.10.14 |
| 申请号 | US201213420559 | 申请日期 | 2012.03.14 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Saito Wataru;Saito Yasunobu;Fujimoto Hidetoshi;Yoshioka Akira;Ohno Tetsuya |
| 分类号 | H01L29/778;H01L29/10;H01L29/423 | 主分类号 | H01L29/778 |
| 代理机构 | Patterson & Sheridan, LLP | 代理人 | Patterson & Sheridan, LLP |
| 主权项 | 1. A nitride semiconductor device, comprising: a first semiconductor layer having a first surface and a second surface on a side opposite to the first surface, the first semiconductor layer including AlxGa1-xN (0≦x<1); a second semiconductor layer bonded to the first surface, the second semiconductor layer including non-doped or n-type AlyGa1-yN (0<y≦1 and x<y); a conductive substrate provided on the second surface side of the first semiconductor layer and electrically connected to the first semiconductor layer; a first electrode electrically connected to a surface of the second semiconductor layer on a side opposite to the first semiconductor layer; a second electrode provided electrically connected to the surface of the second semiconductor layer; a control electrode provided on the surface of the second semiconductor layer between the first electrode and the second electrode; a first terminal; a second terminal; and a third terminal, the first electrode being electrically connected to a drain electrode of a MOSFET formed of Si, the control electrode being electrically connected to a source electrode of the MOSFET, the conductive substrate being electrically connected to a gate electrode of the MOSFET, the first terminal electrically connected to the second electrode, the second terminal electrically connected to the gate electrode of the MOSFET, and the third terminal electrically connected to the source electrode of the MOSFET. | ||
| 地址 | Tokyo JP | ||