Optoelectronic semiconductor component

摘要

An optoelectronic semiconductor component includes a carrier with a carrier top, at least one optoelectronic semiconductor chip mounted on the carrier top and having a radiation-transmissive substrate and a semiconductor layer sequence which includes at least one active layer that generates electromagnetic radiation, and a reflective potting material, wherein, starting from the carrier top, the potting material surrounds the semiconductor chip in a lateral direction at least up to half the height of the substrate.

主权项

1. An optoelectronic semiconductor component comprising:
a carrier with a carrier top, at least one optoelectronic semiconductor chip mounted on the carrier top and having a radiation-transmissive substrate and a semiconductor layer sequence which comprises at least one active layer that generates electromagnetic radiation, a conversion medium that converts radiation generated when the semiconductor chip is in operation partially or completely into radiation of another wavelength, wherein the conversion medium is applied on a main radiation side of the semiconductor chip remote from the carrier top, and a reflective potting material,wherein, starting from the carrier top, the potting material completely surrounds the semiconductor chip in a lateral direction and projects beyond the semiconductor chip, in a direction away from the carrier top,wherein the conversion medium is located between the main radiation side and the potting material so that both the semiconductor chip and the conversion medium are completely covered by the potting material when seen in top view,wherein the potting material directly and form-fittingly surrounds the semiconductor chip and the conversion medium in the lateral direction,wherein a layer thickness of the potting material over the conversion medium is at most 50 μm,wherein a fraction of the radiation generated in the semiconductor chip when in operation leaves the substrate in the lateral direction and penetrates by at most 300 μm into the potting material, andwherein the potting material reflects at least some of the fraction of radiation diffusely back into the substrate.